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US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on April 7 for "Memory device using semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,731, issued on April 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore). "Memory device using semiconductor element" ... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,732, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for manu... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure, method for forming same and layout structure" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,733, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, method for forming... Read More


US Patent Issued to Tokyo Electron on April 7 for "Method of making 3D memory stacking formation with high circuit density" (Florida, Texas Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,734, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of making 3D memory stacking formation with high circuit densi... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, Changxin Jidian (Beijing) Memory Technologies on April 7 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,735, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and Changxin Jidian (Beijing) Memory Technolog... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,736, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and manufacturing method... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor memory device including lower contact plug protruding from sidewall spacers" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,738, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device including lower ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,739, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Jihoon... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,740, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong-W... Read More


US Patent Issued to Arm on April 7 for "Multi-stack bitcell architecture" (French, Indian Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,741, issued on April 7, was assigned to Arm Ltd. (Cambridge, Great Britain). "Multi-stack bitcell architecture" was invented by Yannick Mar... Read More